Technical Library
Application Note
This application note presents the unique Low-Loss probes developed by MPI Corporation to address the challenges of Load-pull measurements.
Application Note
This application note discusses the probe comparison measurement methods and results for both passive and active devices.
ARMMS RF & MICROWAVE SOCIETY CONFERENCE, Nov 18-19, 2019, Oxford, UK
Presentation from MPI Corporation
This presentation discusses solutions for both metrology-grade and production-suitable calibration methods and will share some experimental results and practical recommendations.
Application Note
NoiseProPlus™ can control MPI semi-auto probe station (e.g. TS3000-SE) with SENTIO
Application Note
BSIMProPlus™ can control MPI semi-auto probe station (e.g. TS3000-SE) with SENTIO
ARFTG-91st, June 15, 2018, Philadelphia, PA, USA
Conference Paper
This paper presents the new calibration algorithm TMRR (Thru-Match-Reflect-Reflect), the extension of the Thru-Match-Reflect (TMR) method with one extra Reflect standard.
Application Note
This application note discusses unique integrated solutions developed by MPI Corporation and Rohde & Schwarz to satisfy the most challenging wafer-level measurement requirements of modern RF devices and integrated circuits.
Application Note
This application note discusses unique solutions developed by MPI Corporation to address challenges of wafer-level calibration and measurements at THz frequencies.
Quick How-To Reference
This quick reference discusses such topics as how to planarize, clean and use TITAN™ Probes properly to ensure consistent measurement and calibration results over longest period of time.
Quick How-To Reference
This quick reference presents the procedure of how to define a custom Cal Kit for Keysight PNA family of vector network analyzers and TITAN™ Probes. The example is given for the T26A-GSG0150 TITAN™ Probes, AC2 calibration substrate and 20 GHz PNA-L VNA model.
Quick How-To Reference
This quick reference presents MPI solutions for accurate CV-measurements, system calibration to the probe tip and calibration verification.
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 Sep – 01 Oct 2014, Coronado, CA, USA
Conference Paper
The paper discusses issues involved in on-wafer calibration at mm-wave frequencies, which is the basis for accurate measurements and characterization of active and passive device.
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 Sep – 01 Oct 2014, Coronado, CA, USA
Conference Paper
This paper analyzes the in-situ S-parameter multiline TRL and the transfer TMR calibration methods for the sensitivity to the thermal variation of electrical characteristics of calibration standards.
The NIST-ARFTG Short Course on Microwave Measurements, ARFTG-86th, Dec 1-2, 2015, Atlanta, GA, USA
Presentation from MPI Corporation
This presentation starts with the basics of S-parameter measurement and calibration techniques at wafer-level. Special attention is paid to how to choose the right calibration method and to the definition of the calibration reference impedance of a calibrated system. Finally, the potential sources of calibration residual errors are analyzed and practical examples are given on how to minimize the impact of such errors on the measurement accuracy of a calibrated probe system.
The 11th International Summer School on RF MEMS and RF Microsystems, IHP Microelectronics, June 22-26, 2015, Frankfurt (O), Germany
Presentation from MPI Corporation
This presentation discusses the basics of the wafer-level calibration and de-embedding and focuses on the best practices.
Rohde & Schwarz Seminar, Rohde & Schwarz RUS, Fall 2015, Moscow, Russian Federation
Presentation from MPI Corporation
This presentation discusses the basics of the wafer-level measurements at RF and mm-wave frequencies.
Rohde & Schwarz, CST and MPI Corporation Seminar “Measurement meets simulation”, 12-13 April, 2016, Moscow, Russian Federation
Presentation from MPI Corporation
This presentation discusses specifics of the wafer-level calibration and calibration residual errors at mm-wafer frequency range.